Millimetre-wave performance of state-of-the-art MESFET, MODFET and PBT transistors
Abstract
Device models are used to compare the millimeter-wave performance of state-of-the-art MESFET, MODFET, and PBT transistors. A parametric study is used to identify those parameters that currently limit frequency performance in these devices. It is found that there is no simple relationship between low-frequency gain and F(max). For example, elimination of the domain capacitance reduces the low-frequency gain of the transistor while having virtually no effect on F(max). Significant increases in F(max) with little effect on low-frequency gain result from the elimination of a drain parasitic.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1987
- DOI:
- 10.1049/el:19870105
- Bibcode:
- 1987ElL....23..149T
- Keywords:
-
- Field Effect Transistors;
- Frequency Ranges;
- Millimeter Waves;
- Modfets;
- Schottky Diodes;
- Electronic Equipment Tests;
- Positive Feedback;
- Transmission Loss;
- Electronics and Electrical Engineering