CMOS/SIMOX devices having a radiation hardness of 2 Mrad(Si)
Abstract
The structure of radiation-hardened CMOS/SIMOX devices produced by combining SIMOX with a newly developed lateral isolation structure is described. The electrical characteristics of these devices after irradiation with a Co-60 gamma-ray source are presented. At 2 Mrad(Si) the threshold voltage shift is -0.076 to -0.12 V in the n-channel MOSFET and -0.17 to -0.23 in the p-channel MOSFET. The transconductance degradations are about 14 and 4 percent for n- and p-channel MOSFETs/SIMOX, respectively. The transfer characteristics of a CMOS inverter before and after irradiation are also shown. These operational characteristics are considered sufficient.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1987
- DOI:
- 10.1049/el:19870099
- Bibcode:
- 1987ElL....23..141O
- Keywords:
-
- Cmos;
- Field Effect Transistors;
- Radiation Hardening;
- Radiation Tolerance;
- Circuit Reliability;
- Electronic Equipment Tests;
- Soi (Semiconductors);
- Electronics and Electrical Engineering