Microwave characterisation of 1 micron-gate Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As/InP MODFETs
Abstract
Microwave characterization of nominally 1-micron-gate Al(0.48)In(0.52)AS/Ga(0.47)In(0.53)As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The MODFETs have room-temperature extrinsic transconductances as high as 250 mS/mm. A room-temperature unity-current-gain cutoff frequency of 22 GHz and an f(max) of 35 GHz were measured for a 1.2-micron-gate MODFET.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1987
- DOI:
- 10.1049/el:19870039
- Bibcode:
- 1987ElL....23...53P
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenides;
- Indium Arsenides;
- Indium Phosphides;
- Microwave Circuits;
- Modfets;
- Current Density;
- Equivalent Circuits;
- Transconductance;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering