Hydrogen passivation of C acceptors in high-purity GaAs
Abstract
The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low-temperature photoluminescence and Hall-effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1987
- DOI:
- 10.1063/1.98358
- Bibcode:
- 1987ApPhL..51..596P
- Keywords:
-
- Acceptor Materials;
- Gallium Arsenides;
- Hydrogenation;
- Impurities;
- Photoluminescence;
- Hall Effect;
- P-Type Semiconductors;
- Spectral Energy Distribution;
- Solid-State Physics