Epitaxial growth quality optimization by supercomputer
Abstract
Supercomputer simulations of molecular beam epitaxial growth are applied to modeling processing profiles. Illustration is provided by investigating the relative advantages of high incident beam flux growth, interrupted periodically to allow the growth front to relax, versus continual growth at a relatively low deposition rate.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1987
- DOI:
- 10.1063/1.98434
- Bibcode:
- 1987ApPhL..51..340C
- Keywords:
-
- Computerized Simulation;
- Molecular Beam Epitaxy;
- Optimization;
- Supercomputers;
- Crystal Surfaces;
- Electron Diffraction;
- Monte Carlo Method;
- Topography;
- Solid-State Physics