Apparatus for analysis of epitaxial crystal growth
Abstract
An epitaxial growth and analysis apparatus is used to investigate the chemistry, photochemistry, and kinetics of growth of semiconductor thin films by metalorganic chemical vapor deposition (MOCVD). The apparatus consists of an epitaxial growth chamber compatible with the inclusion of in situ diagnostic techniques, an excimer dye laser system for use in laser induced fluorescence (LIF) studies of gaseous species, and a mass spectrometer for in situ analysis of gaseous constituents of MOCVD growth environment. These items were to be incorporated into a system for the investigation of the growth kinetics of MOCVD.
- Publication:
-
Final Report
- Pub Date:
- July 1986
- Bibcode:
- 1986usc..rept.....D
- Keywords:
-
- Crystal Growth;
- Epitaxy;
- Organometallic Compounds;
- Vapor Deposition;
- Chemical Analysis;
- Fluorescence;
- Laboratory Equipment;
- Mass Spectrometers;
- Thin Films;
- Solid-State Physics