GaAs/In/sub x/Al/sub 1-x/As (0 less than or equal to x less than or equal to 0.006) indirect bandgap superlattices
Abstract
To explain transport data in unipolar superlattice diode structures it is necessary to assume that, for a sufficiently short period, AlAs/GaAs superlattices have an indirect bandgap. By using appropriately designed superlattices grown by molecular beam epitaxy, the supperlattice GAMMA band is moved sufficiently far above the X bands that luminescence from these bands is clearly observed for the first time.
- Publication:
-
Presented at the 11th Annual Symposium of the Uranium Inst
- Pub Date:
- September 1986
- Bibcode:
- 1986uile.symp.....D
- Keywords:
-
- Energy Gaps (Solid State);
- Gallium Arsenides;
- Semiconductor Diodes;
- Superlattices;
- Crystal Lattices;
- Molecular Beam Epitaxy;
- Photoluminescence;
- Solid-State Physics