Research on semiconductor heterostructures
Abstract
A wide diversity of topics related to various new properties of semiconductor heterostructures were investigated, ranging from an intense occupation with the problem of the band lineup at semiconductor heterojunctions, to the problem of the MBE growth of GaAs/Ge alloys and the structure of these alloys, with a variety of topics in between. The development, under this contract, of the C-V profiling technique for the determination of heterojunction band offsets has since then emerged as the most reliable technique of offset determination and which has widely displaced the quantum well absorption technique as the preferred method of offset determination. Below-gap light emission from staggered-lineup heterojunctions has become unusually timely with the discovery that the (Al, Ga)As/GaAs heterosystem is a staggered-lineup system. Several other topics investigated also contributed to an advancement of the understanding of semiconductor heterostructures.
- Publication:
-
Final Report
- Pub Date:
- May 1986
- Bibcode:
- 1986ucsb.reptS....K
- Keywords:
-
- Gallium Arsenides;
- Heterojunctions;
- Quantum Theory;
- Semiconductors (Materials);
- Alloys;
- Growth;
- Reliability;
- Tasks;
- Solid-State Physics