Picosecond optical electronics
Abstract
An electrooptic (EO) sampling system suitable for high speed measurements on gallium arsenide (GaAs) integrated circuits (IC's) was developed. This measurement technique is based on the linear electrooptic effect in GaAs. Using a longitudinal probing geometry, sub bandgap energy infrared light is passed through the substrate of a GaAs IC, reflected off some circuit metallization, and passed through a polarizer, resulting in an intensity change of the light past the polarizer proportional to the voltage across the substrate.
- Publication:
-
Stanford Univ. Report
- Pub Date:
- April 1986
- Bibcode:
- 1986stan.reptS....B
- Keywords:
-
- Electro-Optics;
- Integrated Circuits;
- Optical Equipment;
- Optical Properties;
- Solid State Devices;
- Detection;
- Gallium Arsenides;
- Laser Mode Locking;
- Laser Outputs;
- Metallizing;
- Phase Locked Systems;
- Rates (Per Time);
- Samplers;
- Substrates;
- Electronics and Electrical Engineering