Single event upset estimation for VLSI in space and in-orbit single event upset detector
Abstract
An equipment for single-event measurement for VLSI in geostationary orbit has been developed. A 64-K CMOS SRAM with total dose hardness of more than 100,000 rad(Si) is employed as a sensing device. The single event effect of the 64-K SRAM is evaluated by a circuit simulator, and a heavy ion irradiation test using a cyclotron. Based on the laboratory evaluation, the single event probability of the equipment with eight 64-K SRAMs is predicted to be 18 errors/day for soft error and 27 events/day for latch-up in the geostationary orbit.
- Publication:
-
15th International Symposium on Space Technology and Science
- Pub Date:
- 1986
- Bibcode:
- 1986spte.conf..905S
- Keywords:
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- Astrionics;
- Cmos;
- Earth Orbital Environments;
- Random Access Memory;
- Single Event Upsets;
- Very Large Scale Integration;
- Block Diagrams;
- Carrier Mobility;
- Communication Satellites;
- Geosynchronous Orbits;
- Heavy Ions;
- Radiation Dosage;
- Solar Flares;
- Threshold Voltage;
- Electronics and Electrical Engineering