The gallium arsenide field effect transistor
Abstract
The crystallographic and electronic characteristics of GaAs MESFETs for microwave applications are summarized and compared with Si materials. The GaAs bandwidth is 30 percent greater than the Si bandwidth, and electron mobility in GaAs is 5.5 times that of Si, thereby favoring GaAs for high frequency applications. GaAs MESFETs can be used as oscillators, varactors, and Schottky, Gunn and IMPATT diodes at frequencies up to 100 GHz. I-V curves, structural designs, circuitry diagrams and numerical models are provided for GaAs FETs, which may eventually replace Si devices as the dominant material for microwave applications.
- Publication:
-
Quality, Components and Electronic Technology; International Space Technology Course
- Pub Date:
- 1986
- Bibcode:
- 1986qcet.proc..843G
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Logic Circuits;
- Microwave Equipment;
- Schottky Diodes;
- Avalanche Diodes;
- Channel Noise;
- Heterojunction Devices;
- Power Amplifiers;
- Power Efficiency;
- Signal To Noise Ratios;
- Electronics and Electrical Engineering