Theoretical and experimental investigation of variable band gap cells in thermophotovoltaic energy conversion
Abstract
Using a theoretical model for the performance of a thermophotovoltaic (TPV) energy conversion cell, and values of saturation-current density and diode ideality factor obtained experimentally for two types of InCaAs cells, one GaAs, and two Si cells, the TPV efficiency at various temperatures was calculated for these cells. The results disclosed an apparent advantage of InGaAs cells (with band gaps of 1.15 and 1.20 eV) compared with GaAs and Si cells. Typically, the InGaAs cells had a TPV efficiency of about 40 percent higher than the Si cells; the GaAs cells approached the InGaAs-cell TPV efficiency only at high emitter and cell temperatures. The TPV efficiency decreased approximately linearly with increasing cell temperature, with the rate of decrease about the same for the InGaAs and the Si cells, and much smaller for the GaAs cells. The results on the relationship between the TPV efficiency and the band gap energy were in close agreement with the theoretical predictions.
- Publication:
-
32nd International Power Sources Symposium
- Pub Date:
- 1986
- Bibcode:
- 1986poso.symp..101W
- Keywords:
-
- Energy Gaps (Solid State);
- Photovoltaic Cells;
- Photovoltaic Conversion;
- Thermoelectric Power Generation;
- Absorption Spectra;
- Black Body Radiation;
- Energy Conversion Efficiency;
- Energy Production and Conversion