Fundamental studies and device development in beta silicon carbide
Abstract
The research of this period has involved the growth and characterization of cubic Beta-SiC on hexagonal Alpha-SiC substrates. The resulting films were virtually defect free in contrast to those grown on Si. Additional research has included ion implantation at temperatures sufficient to achieve significant dynamic annealing and p-type samples in the as-implanted state. Efforts geared to making devices have included the use of the new etchant gas, NF3, in the RIE mode and SF6 in the plasma etching mode with very positive results in terms of high etch rate and surface smoothness. MESFET and MOS structures have also been fabricated.
- Publication:
-
Semiannual Progress Report
- Pub Date:
- August 1986
- Bibcode:
- 1986ncsu.rept.....D
- Keywords:
-
- Etching;
- Field Effect Transistors;
- Ion Implantation;
- Metal Oxide Semiconductors;
- P-Type Semiconductors;
- Silicon Carbides;
- Vapor Deposition;
- Annealing;
- Electron Microscopy;
- Electronic Equipment;
- Mass Spectroscopy;
- Thin Films;
- Solid-State Physics