100 W peak/30 W average broadband X-band solid-state amplifier
Abstract
With increasing power levels being obtained from solid-state power sources such as IMPATTs and FETs, it is desirable to combine several such sources to obtain higher power levels and take advantage of the features of these devices such as small size, weight and reliability. The paper describes progress made in developing a wideband, high power solid-state amplifier at X-band. At present, the device has a bandwidth of 500 MHz (9.5-10.0 GHz) and operates at a power level of 100 W at 30 percent duty. This has been achieved by combining only four GaAs IMPATT diodes in a spatial field type of combining circuit. Important operational features of this power combiner/amplifier are its high combining efficiency and a high degree of isolation between the elemental amplifier modules. The 100 W X-band solid-state amplifier is designed to operate at a gain level of 45 dB. This paper also describes a 100 W CW GaAs FET spatial field power combiner designed for 10 percent bandwidth at X-band.
- Publication:
-
Military Microwaves 1986
- Pub Date:
- 1986
- Bibcode:
- 1986mimi.proc..354M
- Keywords:
-
- Amplifier Design;
- Broadband Amplifiers;
- Microwave Amplifiers;
- Solid State Devices;
- Superhigh Frequencies;
- Avalanche Diodes;
- Field Effect Transistors;
- Gallium Arsenides;
- Electronics and Electrical Engineering