GaAs photoconductors to characterize picosecond response in GaAs integrated devices and circuits
Abstract
Optoelectronic techniques that use femtosecond lasers and promise the precise measurement of transient response in high speed electronic devices and circuits have been under study for several years. We have investigated on-wafer electrical-impulse generation and sampling using femto-second-laser-excited GaAs photoconductors. This approach is applicable to any transmission line structure, it is directly integrable, non-invasive, jitter-free, and it is applicable to both microwave and digital circuits. We have developed the capability to: (1) generate electrical impulses in on-wafer GaAs transmission lines with 3-dB bandwidths in excess of 60 GHz, and (2) sample the electrical impulse response of an on-wafer test structure without jitter and with a 3-dB measurement bandwidth of 103 GHz at a noise level of -67 dBm. We have studied dispersion in GaAs on-wafer coplanar-waveguide transmission lines.
- Publication:
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Presented at the International Conference on High-speed Electronics
- Pub Date:
- 1986
- Bibcode:
- 1986hse..conf.....H
- Keywords:
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- Gallium Arsenides;
- Integrated Circuits;
- Photoconductors;
- Pulse Generators;
- Bandwidth;
- Transmission Lines;
- Waveguides;
- Solid-State Physics