Transport in submicron MOSFETS
Abstract
Research on this contract gradually shifted from the treatment of transport in the inversion channel of a silicon MOSFET to the general treatment of heterointerfaces and superlattices, as well as the use of the transport perpendicular to the interface to study the properties of the materials themselves. New understanding of the limitation of optical measurements of inter-band transitions in quantum wells in determining the band offsets were obtained.
- Publication:
-
Arizona State University Technical Report
- Pub Date:
- September 1986
- Bibcode:
- 1986asu..rept.....F
- Keywords:
-
- Field Effect Transistors;
- Heterojunctions;
- Metal Oxide Semiconductors;
- Transport Properties;
- Aluminum Gallium Arsenides;
- Eigenvalues;
- Electron Mobility;
- Electron Tunneling;
- Gallium Arsenides;
- Gates (Circuits);
- Silicon;
- Solid-State Physics