Deep level transient spectroscopy investigation of sputter deposited Mo-GaAs Schottky barriers
Abstract
Deep level transient spectroscopy investigation reveals how the sputter deposition process can greatly influence the characteristics of Mo-GaAs Schottky barriers. It is found that the damage introduced during deposition cannot be completely eliminated by annealing at 450 C for 1hr and as such stringent control of the deposition parameters is necessary if near ideal barriers are to be fabricated by this technique.
- Publication:
-
Presented at the 13th Advanced Materials for Telecommunication Conference
- Pub Date:
- 1986
- Bibcode:
- 1986amt..conf...17M
- Keywords:
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- Gallium Arsenides;
- Molecular Spectroscopy;
- Molybdenum;
- Schottky Diodes;
- Sputtering;
- Annealing;
- Damage;
- Process Control (Industry);
- Quality Control;
- Solid-State Physics