Recent developments in infrared detector at LIR
Abstract
CdHgTe epilayers have been grown by means of an open-tube technique for IR detector applications operating in the 3-5 and 8-12 micron ranges. Attention is presently given to an ion-implanted photovoltaic technology that yields either large mosaics or linear arrays of such detectors. Mean R-shunt values of more than a few 10 to the 8th Ohms are obtained in these devices. The photovoltaic arrays are hybridized on CCDs with an In-bump technique having a 100-percent interconnection yield.
- Publication:
-
Advanced Infrared Detectors and Systems
- Pub Date:
- 1986
- Bibcode:
- 1986aids.conf...44D
- Keywords:
-
- Focal Plane Devices;
- Hybrid Circuits;
- Infrared Detectors;
- Photovoltaic Cells;
- Charge Coupled Devices;
- Crystal Growth;
- Linear Arrays;
- Mercury Cadmium Tellurides;
- Quantum Wells;
- Signal To Noise Ratios;
- Instrumentation and Photography