Two-dimensional gas of surface electrons in highly doped InAs - The structure of subbands and scattering mechanisms

The parameters of a quasi-two-dimensional electron gas of enriched n-InAs layers are investigated experimentally and theoretically. The parameters of two-dimensional subband populations, the coupling energies and the cyclotron masses, determined from an analysis of capacitance magnetooscillations, are in good agreement with the results of a quasi-classical calculation. For a large number of semiconductors and semimetals with a Kein dispersion law, the theory predicts that the parameters of the two-dimensional subbands are close to one another; this is confirmed by comparison with experimental data for InAs and Hg(1-x)Cd(x)Te (x is less than 0.2). It is shown that scattering by ionized donors and surface roughness plays a dominant role in the samples studied.