Negative absolute mobility of minority electrons in GaAs quantum wells
Abstract
We report the observation of negative absolute mobility of electrons (i.e., a drift toward the negative electrode) in p-modulation-doped GaAs quantum wells. This unusual effect results from ``carrier drag'' on the electrons by the high-mobility hole plasma via electron-hole scattering.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 1986
- DOI:
- 10.1103/PhysRevLett.56.2736
- Bibcode:
- 1986PhRvL..56.2736H
- Keywords:
-
- Electron Mobility;
- Electron Scattering;
- Gallium Arsenides;
- Minority Carriers;
- Quantum Wells;
- Hole Mobility;
- Luminescence;
- P-Type Semiconductors;
- Semiconductor Plasmas;
- Temperature Dependence;
- Solid-State Physics;
- 72.20.Fr;
- 72.20.Ht;
- 73.60.Fw;
- Low-field transport and mobility;
- piezoresistance;
- High-field and nonlinear effects