Bistability of acoustoelectronic processes in the nonsteady-state mode
Abstract
The experimental observation of the bistability of acoustoelectronic processes in a layered piezoelectric-semiconductor structure (zinc oxide films on silicon) is reported. The experiment involved the excitation of surface acoustic waves and the detection of the transverse acoustoelectric effect. Radio pulses at a frequency of 150 MHz were imputted to transducers on the film surface. The observed bistability in the pulsed mode may be connected with both potential and nonpotential effects of the alternating SAW electric field on the charge carriers. Changes in band curvature under the effect of the changing density of trapped carrier leads to a change in this density of the same sign, resulting in a surface-state instability.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- July 1986
- Bibcode:
- 1986PZhTF..12..799V
- Keywords:
-
- Bistable Circuits;
- Electroacoustics;
- Electromagnetic Pulses;
- Piezoelectric Transducers;
- Semiconductor Devices;
- Surface Acoustic Wave Devices;
- Band Structure Of Solids;
- Radio Frequencies;
- Silicon Films;
- Unsteady State;
- Zinc Oxides;
- Electronics and Electrical Engineering