Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
Abstract
Light electron effective mass was found to be a very important parameter for improving the negative differential resistance (NDR) of a resonant tunneling barrier (RTB) structure. An InAlAs (41 Å)/InGaAs (61.5 Å)/InAlAs (41 Å) RTB structure, lattice-matched to InP, has been grown for the first time by MBE and dramatically improved NDR has been achieved. Peak current density as high as 2.2× 104 A/cm2 with an excellent peak-to-valley current ratio of 11.7 was obtained at 77 K, which is the best data ever reported so far for any RTB structures.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- December 1986
- DOI:
- 10.1143/JJAP.25.L983
- Bibcode:
- 1986JaJAP..25L.983I
- Keywords:
-
- Aluminum Arsenides;
- Electron Tunneling;
- Gallium Arsenides;
- Indium Arsenides;
- Negative Resistance Devices;
- Resonant Tunneling;
- Barrier Layers;
- Current Density;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering