Hot Electron Conduction in a-Si:H/a-Si0.2C0.8:H Super Structure
Abstract
A-Si:H/a-Si0.2C0.8:H super structures were fabricated by glow discharge method. The barrier layer using a-Si0.2C0.8:H was typically 40 Å thick. The thickness of the well layer consisting of doped n-type a-Si:H was changed from 17 Å to 100 Å. The construction of super structures was confirmed by X-ray diffraction. Generation of hot electrons using a newly devised super structure was verified experimentally for the first time.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- November 1986
- DOI:
- Bibcode:
- 1986JaJAP..25L.922Y
- Keywords:
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- Amorphous Silicon;
- Doped Crystals;
- Glow Discharges;
- Hot Electrons;
- Silanes;
- Silicon Carbides;
- Electron Spectroscopy;
- Energy Gaps (Solid State);
- Heterojunctions;
- Hydrogenation;
- Volt-Ampere Characteristics;
- Solid-State Physics