Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
Abstract
The effect of Si doping profile on I-V characteristics of an AlGaAs/GaAs resonant tunneling barrier (RTB) structure was studied by changing the thickness of an undoped GaAs “spacer” layer placed adjacent to the RTB. We found that the peak and the valley current density in the negative differential resistance region at 77 K depends strongly on the thickness of the spacer layer. By using a spacer layer of 50 Å, we achieved a resonant tunneling diode with the highest peak current density of 2× 104 A/cm2 with a good peak-to-valley ratio of 3.5 at 77 K.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- July 1986
- DOI:
- 10.1143/JJAP.25.L577
- Bibcode:
- 1986JaJAP..25L.577M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Doped Crystals;
- Electron Tunneling;
- Molecular Beam Epitaxy;
- Resonant Tunneling;
- Silicon;
- Volt-Ampere Characteristics;
- Current Density;
- Gallium Arsenides;
- Negative Resistance Devices;
- Electronics and Electrical Engineering