Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processing
Abstract
Spectacular GaAs layers were grown directly on (100)Si by low pressure MOVPE using low temperature processing. The layers were largely of single domain with net carrier concentrations less than 10 14 cm -3. Intentionally doped n-type layers ( Nd ⋍ 10 16 cm -13) showed room temperature electron mobility of 5700 cm 2/V·s. The layers were of high structural, optical, and device quality, and exhibited intrinsic photoluminescence (PL) at room temperature.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- September 1986
- DOI:
- 10.1016/0022-0248(86)90344-1
- Bibcode:
- 1986JCrGr..77..503S
- Keywords:
-
- Gallium Arsenides;
- Heat Treatment;
- Organometallic Compounds;
- Silicon Junctions;
- Sis (Semiconductors);
- Vapor Phase Epitaxy;
- Doped Crystals;
- Electron Mobility;
- Field Effect Transistors;
- Low Temperature;
- N-Type Semiconductors;
- Photoluminescence;
- Solid-State Physics