Effects of DX center and spatial distribution of electrons on the density of twodimensional electron gas in modulationdoped AlGaAs/GaAs heterojunction structure
Abstract
The equilibrium density of twodimensional electron gas in a modulationdoped AlGaAs/GaAs heterojunction structure has been studied by considering the deep electron traps (i.e., DX center) in doped AlGaAs layer, the spatial distribution of electrons in three conductionband minima (Γ, L, and X), and the heavy doping effect. It is shown that the amount of conduction bandbending increases and the equilibrium density of twodimensional electron gas decreases significantly as a result of incorporating these effects.
 Publication:

Journal of Applied Physics
 Pub Date:
 November 1986
 DOI:
 10.1063/1.337546
 Bibcode:
 1986JAP....60.3789L
 Keywords:

 Aluminum Gallium Arsenides;
 Carrier Density (Solid State);
 Electron Gas;
 Gallium Arsenides;
 Heterojunctions;
 Spatial Distribution;
 Conduction Bands;
 Plasma Equilibrium;
 Trapped Particles;
 SolidState Physics