First observation of two-dimensional hole gas in a Ga<SUB>0.47</SUB>In<SUB>0.53</SUB>As/InP heterojunction grown by metalorganic vapor deposition

doi:10.1063/1.337158

First observation of two-dimensional hole gas in a Ga_0.47In_0.53As/InP heterojunction grown by metalorganic vapor deposition

We report the observation of a two-dimensional (2D) hole gas in Ga_0.47In_0.53As/InP heterojunction grown by metalorganic chemical-vapor deposition. In a sample with a total hole density p_tot =7.6×10¹¹ cm^-² a Hall mobility μ_H =10 500 cm²/V s was reached at 4.2 K. Angle-dependent Shubnikov-de Haas measurements as well as quantized Hall effect observations confirmed the two-dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low-temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.

Publication:

Journal of Applied Physics

Pub Date:

October 1986

DOI:

10.1063/1.337158

Bibcode:

1986JAP....60.2453R

Keywords:

Gallium Arsenides;
Heterojunctions;
Holes (Electron Deficiencies);
Indium Phosphides;
P-Type Semiconductors;
Vapor Deposition;
Carrier Density (Solid State);
Electrical Resistivity;
Hall Effect;
Organic Semiconductors;
Superconductors;
Solid-State Physics

ADS

First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition

Abstract

First observation of two-dimensional hole gas in a Ga_0.47In_0.53As/InP heterojunction grown by metalorganic vapor deposition