Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition
Abstract
Ga0.47In0.53As-InP multiquantum wells grown by low-pressure metalorganic chemical vapor deposition on garnet (GGG=Gd3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x-ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- March 1986
- DOI:
- 10.1063/1.336374
- Bibcode:
- 1986JAP....59.2261R
- Keywords:
-
- Gallium Arsenides;
- Indium Phosphides;
- Organometallic Compounds;
- Photoluminescence;
- Quantum Wells;
- Vapor Deposition;
- Crystal Lattices;
- Indium Arsenides;
- Microstructure;
- X Ray Diffraction;
- Yttrium-Iron Garnet;
- Solid-State Physics