Effects of 6 MeV electron irradiation on the electrical characteristics of LPE Hg0.7 Cd0.3Te/CdTe MESA photodiodes
Abstract
The reverse leakage currents of ion-implanted LPE Hg(0.7)Cd(0.3)Te photodiodes increase significantly after 6 MeV electron irradiations to fluences of 10 to the 14th/sq cm at T = 77 K or 10 to the 15th/sq cm at T = 193 K. Associated increases in low-frequency noise and the effects of 300 K annealing are shown.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1986
- DOI:
- Bibcode:
- 1986ITNS...33.1471D
- Keywords:
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- Electrical Properties;
- Electron Irradiation;
- Mercury Cadmium Tellurides;
- Photodiodes;
- Radiation Damage;
- Annealing;
- Low Temperature;
- Noise;
- Radiation Tolerance;
- Electronics and Electrical Engineering