Measurement of implantation profiles in garnet by transmission electron microscopy
Abstract
Thin films of (SmYGdTm)3Ga0.4Fe4.6O12 were fabricated by LPE on 111-line substrates of Gd-Ga garnet, masked with parallel stripes of photoresist, and implanted with D ions at 88 keV and doses (3.5-5.5) x 10 to the 16th D2(+)/sq cm, and/or with O ions at 100 keV and doses (0.95-8.6) x 10 to the 14th O(+)/sq cm. Implantation profiles were examined by TEM incorporating a cross-section technique to reveal depth penetration in unmasked regions and lateral diffuseness at mask edges. Resultant profiles are in qualitative agreement with stress-induced magnetic anisotropy within the implanted zone.
- Publication:
-
IEEE Transactions on Magnetics
- Pub Date:
- September 1986
- DOI:
- 10.1109/TMAG.1986.1064568
- Bibcode:
- 1986ITM....22.1296S
- Keywords:
-
- Bubble Memory Devices;
- Electron Microscopy;
- Garnets;
- Ion Implantation;
- Liquid Phase Epitaxy;
- Thin Films;
- Samarium Compounds;
- Thorium Compounds;
- Yttrium Compounds;
- Solid-State Physics