IIIA-3 comparison of compositionally abrupt and graded emitter-base junctions in the heterojunction bipolar transistor
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1986
- DOI:
- 10.1109/T-ED.1986.22774
- Bibcode:
- 1986ITED...33.1844E