A subnanosecond HEMT 1-kbit static RAM
Abstract
A static RAM LSI using high electron mobility transistor (HEMT) technology has been realized for the first time. The RAM has a memory capacity of 1024 bits and integrates 7244 HEMT devices into 1024-words x 1-bit organization. The RAM uses enhancement/depletion-(E/D) type direct-coupled FET logic circuitry as a basic circuit and can operate fully statically. The RAM is fabricated on an AlGaAs/GaAs heterojunction epistructure grown by molecular beam epitaxy on a Cr-doped 2-in. LEC GaAs substrate wafer. A subnanosecond access time of 0.87 ns with a 1.60-V supply and 360-mW dissipation has been attained at liquid nitrogen temperature.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- October 1986
- DOI:
- 10.1109/JSSC.1986.1052619
- Bibcode:
- 1986IJSSC..21..869N
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- High Electron Mobility Transistors;
- Large Scale Integration;
- Logic Circuits;
- Random Access Memory;
- Chips (Electronics);
- Heterojunctions;
- Integrated Circuits;
- Schottky Diodes;
- Electronics and Electrical Engineering