Theory of the doped quantum well superlattice APD - A new solid-state photomultiplier
Abstract
Using an ensemble Monte Carlo calculation, a new superlattice quantum well avalanche phododiode (APD) was analyzed. The device consisted of repeated unit cells formed from a p-i-n Al(0.45)Ga(0.55)As region followed by near-intrinsic GaAs and Al(0.45)Ga(0.55)As layers. The effects of various parameters, such as the high-field layer width, GaAs well width, low-field AlGaAs layer width, and applied electric field on the electron and hole ionization coefficients was studied. It was found that this device more nearly mimics a photomultiplier than the quantum well APD and the staircase APD, when applied to the GaAs/AlGaAs material system.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- October 1986
- Bibcode:
- 1986IJQE...22.1997B
- Keywords:
-
- Aluminum Gallium Arsenides;
- Avalanche Diodes;
- Doped Crystals;
- Photodiodes;
- Quantum Wells;
- Superlattices;
- Diodes;
- Electrons;
- Holes (Electron Deficiencies);
- Ionization;
- P-I-N Junctions;
- Electronics and Electrical Engineering