Comparative studies of Si, GaAs, and InP millimeter-wave IMPATT diodes
Abstract
High frequency limitations of Si, GaAs and InP IMPATT are investigated by concentrating on the effects of transient carrier transport and generation. A large-signal microscopic computer simulation is used to study the operating mechanisms in the 90, 140 and 220 GHz atmospheric windows. Inertial effects which can enhance or degrade the performance are identified first. The frequency and signal level dependence is then discussed in terms of intrinsic properties of materials.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- June 1986
- DOI:
- 10.1007/BF01013026
- Bibcode:
- 1986IJIMW...7..771L
- Keywords:
-
- Atmospheric Windows;
- Avalanche Diodes;
- Carrier Transport (Solid State);
- Computerized Simulation;
- Millimeter Waves;
- Semiconductor Diodes;
- Electron Energy;
- Gallium Arsenides;
- Indium Phosphides;
- Silicon;
- Electronics and Electrical Engineering;
- transient carrier transport;
- IMPATT;
- Si-GaAs-InP materials