GaAs inversion-base bipolar transistor (GaAs IBT)
Abstract
A completely new type of GaAs bipolar transistor with a base formed by a two-dimensional hole gas has been fabricated. The transistor has no metallurgical base layer but has an extremely thin inversion hole layer working as a base layer. The current gain beta = 5.6 at 77 K and beta = 17.1 at 300 K was obtained for the common emitter mode.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1986
- DOI:
- 10.1109/EDL.1986.26498
- Bibcode:
- 1986IEDL....7..627M
- Keywords:
-
- Bipolar Transistors;
- Gallium Arsenides;
- Holes (Electron Deficiencies);
- Volt-Ampere Characteristics;
- Annealing;
- Ion Implantation;
- Sputtering;
- Electronics and Electrical Engineering