A fully planar heterojunction bipolar transistor
Abstract
A fully planar heterojunction bipolar transition in the normal emitter-up configuration is reported. The process utilizes a two-step epitaxial deposition with an intervening selective ion implant of bases. A process is described, the aluminum lift-off process, with which refractory metal contacts have been used. Large test devices fabricated have dc gains of beta = 600.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1986
- DOI:
- 10.1109/EDL.1986.26493
- Bibcode:
- 1986IEDL....7..615T
- Keywords:
-
- Bipolar Transistors;
- Gallium Arsenides;
- Heterojunctions;
- Ion Implantation;
- Organometallic Compounds;
- Vapor Deposition;
- Electric Contacts;
- Etching;
- Integrated Circuits;
- N-Type Semiconductors;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering