A tunneling emitter bipolar transistor
Abstract
In a Tunneling Emitter Bipolar Transistor, the enhancement of the emitter injection efficiency is achieved by utilizing a very large difference in the tunneling probabilities for electrons and holes in a thin doped graded AlGaAs layer. This layer is inserted between the n-type GaAs emitter and p-type GaAs base. This device should have a high emitter efficiency and low parasitic resistances.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1986
- Bibcode:
- 1986IEDL....7..416X
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Carrier Injection;
- Electron Tunneling;
- Emitters;
- Heterojunction Devices;
- Band Structure Of Solids;
- Carrier Transport (Solid State);
- Doped Crystals;
- Electrical Resistance;
- Electronics and Electrical Engineering