Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)
Abstract
The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1986
- DOI:
- 10.1109/EDL.1986.26376
- Bibcode:
- 1986IEDL....7..288H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Carrier Transport (Solid State);
- Field Effect Transistors;
- Heterojunction Devices;
- Indium Arsenides;
- Transconductance;
- Doped Crystals;
- Low Temperature;
- Saturation;
- Electronics and Electrical Engineering