High-performance P-n-p AlGaAs/GaAs heterojunction bipolar transistors - A theoretical analysis
Abstract
A simple analysis is used to show that an AlGaAs/GaAs P-n-p heterojunction bipolar transistor (HBT) incorporating a thin graded-composition Al(x)Ga(1-x)As base can yield high-frequency performance comparable to the N-p-n structure for millimeter wave and digital applications. The f(tau) and f(max) of the P-n-p device are 1/2-2/3 and equal, respectively, to these parameters for the N-p-n device, which conceptually opens the possibility of new N-p-n/P-n-p complementary HBT circuits. The specific values of f(tau) and f(max) presented here also suggest that f(max) for both types of devices should eventually exceed 100 GHz by a substantial margin through the use of submicrometer, self-aligned structures.
- Publication:
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IEEE Electron Device Letters
- Pub Date:
- February 1986
- DOI:
- Bibcode:
- 1986IEDL....7..108H
- Keywords:
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- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Heterojunction Devices;
- Junction Transistors;
- Millimeter Waves;
- P-N-P Junctions;
- Digital Systems;
- Electrical Properties;
- Frequency Response;
- Gallium Arsenides;
- Network Analysis;
- Electronics and Electrical Engineering