Operation of a high-frequency photodiode-HEMT hybrid photoreceiver at 10 GHz
Abstract
A hybrid photoreceiver based on an ITO/GaAs photodiode integrated with a 0.5 micron gate length high electron mobility transistor (HEMT) is reported. The receiver gave an 8 dB associated gain at 10 GHz compared with a discrete detector.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1986
- DOI:
- 10.1049/el:19860347
- Bibcode:
- 1986ElL....22..509H
- Keywords:
-
- Gallium Arsenides;
- High Electron Mobility Transistors;
- Ito (Semiconductors);
- Microwave Equipment;
- Photodiodes;
- Electron Beams;
- Lithography;
- Schottky Diodes;
- Electronics and Electrical Engineering