Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs
Abstract
GaAs/AlGaAs collector-top heterojunction bipolar transistors with magnesium and phosphorus double-implanted external bases were fabricated. A cutoff frequency of 17 GHz and a gate delay time of 63 ps for DCTL were obtained. These results indicate the potential of collector-top HBTs for high-speed ICs.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1986
- DOI:
- 10.1049/el:19860216
- Bibcode:
- 1986ElL....22..315M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Digital Systems;
- Heterojunction Devices;
- Transistor Logic;
- Vhsic (Circuits);
- Ion Implantation;
- Junction Transistors;
- Microwave Circuits;
- Power Efficiency;
- Switching Circuits;
- Time Lag;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering