High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy
Abstract
Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79 percent and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8 deg (1.9 times diffraction limit) for a 100 micron-wide laser were obtained under pulsed conditions.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1986
- DOI:
- 10.1049/el:19860054
- Bibcode:
- 1986ElL....22...79L
- Keywords:
-
- Laser Outputs;
- Molecular Beam Epitaxy;
- Quantum Efficiency;
- Quantum Wells;
- Semiconductor Lasers;
- Current Distribution;
- Far Fields;
- Gradient Index Optics;
- Lasers and Masers