Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy
Abstract
Single-crystal epitaxial layers of (100) and (111) oriented CdTe were grown on (100) oriented GaAs substrates by molecular beam epitaxy. Low-temperature (4.2 K) photoluminescence spectra exhibit free-exciton and bound-exciton peaks having linewidths on the order of 2 meV for both CdTe crystallographic orientations. However, defect-related photoluminescence is found to be stronger in (100) oriented CdTe.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 1986
- DOI:
- 10.1063/1.97624
- Bibcode:
- 1986ApPhL..49.1473L
- Keywords:
-
- Cadmium Tellurides;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Photoluminescence;
- Single Crystals;
- Crystal Defects;
- Crystal Lattices;
- Excitons;
- Solid-State Physics