Dopant redistribution in silicon-on-sapphire films during thermal annealing
Abstract
Arsenic depth distributions in silicon-on-sapphire films, after annealing at 900 °C for a range of times, have been studied by Rutherford backscattering and spreading resistance techniques. A continuum pipe diffusion model is developed which accounts satisfactorily for the rapid diffusion and segregation effects observed. In addition, the same model predicts two-dimensional dopant profiles with several novel features relevant to microelectronic device processing.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 1986
- DOI:
- 10.1063/1.96695
- Bibcode:
- 1986ApPhL..48..704C
- Keywords:
-
- Annealing;
- Crystal Defects;
- Doped Crystals;
- Electrical Properties;
- Silicon Films;
- Sos (Semiconductors);
- Arsenic;
- Diffusion;
- Microelectronics;
- Solid-State Physics