Picosecond time-of-flight measurements of minority electrons in GaAs/AlGaAs quantum well structures
Abstract
We report direct measurements of drift velocities of photoexcited minority electrons in p-doped quantum well structures of GaAs/Al0.48Ga0.52As, using picosecond time-of-flight techniques. At low electric fields the electron mobility is strongly reduced by electron-hole scattering. At high fields (>8 kV/cm) negative differential mobility is observed, which we interpret as real-space and valley transfer of hot electrons into the X valley of Al0.48Ga0.52As. From the photoluminescence spectra the carrier temperatures at which the transfer effects occur are determined.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 1986
- DOI:
- 10.1063/1.96979
- Bibcode:
- 1986ApPhL..48..148H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenides;
- High Electron Mobility Transistors;
- Minority Carriers;
- Quantum Wells;
- Drift Rate;
- Electron Energy;
- Energy Transfer;
- Negative Conductance;
- P-Type Semiconductors;
- Picosecond Pulses;
- Solid-State Physics