Transfer of a metal from a transparent film to the surface of silicon to produce P-N junction solar cells
Abstract
A new method is proposed for preparing silicon P-N junctions. The first consists in fixing a tranparent plastic film coated with a thin layer of a conventional dopant on the surface of the wafer, then illuminating this sandwich with a higher power Q switched laser. Two successive pulses are used, the first being able to transfer the dopant from the film to the silicon surface, the second to induce a liquid phase diffusion incorporating the dopant into the silicon lattice. Solar cells have been prepared by using this process, implying several attractive features.
- Publication:
-
ASME Journal of Solar Energy and Engineering
- Pub Date:
- May 1986
- Bibcode:
- 1986ATJSE.108..102T
- Keywords:
-
- Doped Crystals;
- P-N Junctions;
- Polymeric Films;
- Silicon Junctions;
- Solar Cells;
- Aluminum;
- Mass Spectroscopy;
- Q Switched Lasers;
- Ruby Lasers;
- Transparence;
- Electronics and Electrical Engineering