Novel approaches to passivation of Si for VHSIC - based on fundamental studies
Abstract
The primary focus of this work was the exploration of fundamental aspects of the oxidation of semiconductor surfaces with a view to addressing some of the problems that have arisen in industry in the growth of ultra thin silicon dioxide layers that are a requirement of smaller, faster CMOS devices. The work falls into three categories, each concerned with a problem that is related to the central issue in a different way: (1) A study of th fundamental properties of the diamond surface. (2) A study of rare earth metal/semiconductor interfaces and compounds. (3) A study of the fundamental characteristics of the oxidation of silicon and the production of thin silicon oxide layers.
- Publication:
-
Stanford Univ. Report
- Pub Date:
- May 1985
- Bibcode:
- 1985stan.reptS....S
- Keywords:
-
- Integrated Circuits;
- Oxidation;
- Semiconductors (Materials);
- Silicon Dioxide;
- Surface Layers;
- Crystal Growth;
- Passivity;
- Rare Earth Compounds;
- Surface Reactions;
- Thin Films;
- Electronics and Electrical Engineering