OM-VPE growth of cascade solar cells incorporating a low-obscuration, in-situ-grown tunnel junction
Abstract
This paper presents the results of a new technique for the in-situ growth of a low-obscuration (not greater than 5 percent) tunnel junction interconnect for use with Al(x)Ga(1-x)As system in cascade solar cells. The tunnel junction exhibits a resistance of 1 ohm sq cm and is stable for the time and temperature conditions necessary for two-junction cascade cell growth. Results are presented for GaAs/GaAs and In(0.20)Ga(0.80)As/GaAs cascade solar cells.
- Publication:
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IN: Photovoltaic Specialists Conference
- Pub Date:
- 1985
- Bibcode:
- 1985pvsp.conf..449G
- Keywords:
-
- Gallium Arsenides;
- Semiconductor Junctions;
- Solar Cells;
- Vapor Phase Epitaxy;
- Spectral Sensitivity;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering