Low-loss high speed switching device, 2500 V-300 A static induction thyristor
Abstract
An anode-emitter-shorted type 2500 V-300 A buried-gate static induction thyristor is fabricated. Results indicate a very high speed turn-on time of 2.0 microsec and turn-off time of 3.1 microsec, both at 1000 A. The switching-loss and conduction-loss of the high power static induction thyristor are evaluated for the first time in this paper. The snubber-circuit-less operation is first demonstrated for the high power static induction thyristor.
- Publication:
-
IN: PESC '85; Annual Power Electronics Specialists Conference
- Pub Date:
- 1985
- Bibcode:
- 1985ppes.conf..257N
- Keywords:
-
- Fabrication;
- Network Analysis;
- Semiconductor Devices;
- Switching;
- Thyristors;
- Anodes;
- Cathodes;
- Electrical Properties;
- Emitters;
- Energy Dissipation;
- P-N Junctions;
- Electronics and Electrical Engineering