P-N junction controlled field emitter array cathode
Abstract
A Field Emitter Array comprising a semiconductor substrate with an emitter surface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid 1 max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where 1 max = j sat X A p-n, j sat being the saturation current density and A p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating a electric field that induces the emission of the electron current from the emitter tips.
- Publication:
-
Patent Department of the Navy
- Pub Date:
- April 1985
- Bibcode:
- 1985navy.reptU....G
- Keywords:
-
- Arrays;
- Cathodes;
- Emitters;
- P-N Junctions;
- Semiconductor Junctions;
- Apertures;
- Bias;
- Current Density;
- Electric Fields;
- Electron Tubes;
- Electrons;
- Field Emission;
- Patents;
- Pyramids;
- Substrates;
- Traveling Wave Amplifiers;
- Vacuum Tubes;
- Electronics and Electrical Engineering